STW21NM50N 全国供应商、价格、PDF资料
STW21NM50N详细规格
- 类别:FET - 单
- 描述:MOSFET N-CH 500V 18A TO-247
- 系列:MDmesh™
- 制造商:STMicroelectronics
- FET型:MOSFET N 通道,金属氧化物
- FET特点:标准
- 漏极至源极电压333Vdss444:500V
- 电流_连续漏极333Id4440a025000C:18A
- 开态Rds(最大)0a0IdwwwwVgs0a025000C:190 毫欧 @ 9A,10V
- Id时的Vgs333th444(最大):4V @ 250µA
- 闸电荷333Qg4440a0Vgs:65nC @ 10V
- 输入电容333Ciss4440a0Vds:1950pF @ 25V
- 功率_最大:140W
- 安装类型:通孔
- 封装/外壳:TO-247-3
- 供应商设备封装:TO-247-3
- 包装:管件
- DIP C&K Components 6-TSSOP,SC-88,SOT-363 SWITCH DIP UNSEALED 5POS SMD
- 功率,高于 2 安 Honeywell Sensing and Control 2-SMD,无引线,裸露焊盘 RELAY GEN PURPOSE DPDT 5A 24V
- 电容器 United Chemi-Con 径向,Can - 卡入式 CAP ALUM 10000UF 16V 20% SNAP
- 钽 AVX Corporation 2917(7343 公制) CAP TANT 6.8UF 75V 20% 2917
- FET - 单 STMicroelectronics TO-247-3 MOSFET N-CH 600V 20A TO-247
- 逻辑 - 栅极和逆变器 NXP Semiconductors 14-SOIC(0.154",3.90mm 宽) IC AND GATE 3-IN 14SOIC
- 配件 Omron Electronics Inc-IA Div 16PT INPUT NPN
- 功率,高于 2 安 Honeywell Sensing and Control 2-SMD,无引线,裸露焊盘 RELAY GEN PURPOSE 4PDT 3A 220V
- 电容器 United Chemi-Con 径向,Can - 卡入式 CAP ALUM 6800UF 25V 20% SNAP
- 钽 AVX Corporation 2917(7343 公制) CAP TANT 10UF 63V 20% 2917
- 逻辑 - 缓冲器,驱动器,接收器,收发器 NXP Semiconductors 14-DIP(0.300",7.62mm) IC BUFFER TRI-ST QUAD 14PDIP
- 配件 Omron Electronics Inc-IA Div 16PT INPUT NPN
- 功率,高于 2 安 Honeywell Sensing and Control 2-SMD,无引线,裸露焊盘 RELAY GEN PURPOSE 4PDT 3A 24V
- DIP C&K Components 6-TSSOP,SC-88,SOT-363 SWITCH DIP TOP SLIDE FLUSH 6POS
- 钽 AVX Corporation 1206(3216 公制) CAP TANT 100UF 4V 20% 1206