产品属性 属性值 搜索类似
制造商: Infineon
产品种类: MOSFET
RoHS: 详细信息
技术: Si
安装风格: Through Hole
封装 / 箱体: TO-220-3
晶体管极性: N-Channel
通道数量: 1 Channel
Vds-漏源极击穿电压: 75 V
Id-连续漏极电流: 82 A
Rds On-漏源导通电阻: 13 mOhms
Vgs - 栅极-源极电压: - 20 V, + 20 V
Vgs th-栅源极阈值电压: 2 V
Qg-栅极电荷: 106.7 nC
小工作温度: - 55 C
大工作温度: + 175 C
Pd-功率耗散: 200 W
通道模式: Enhancement
封装: Tube
商标: Infineon / IR
配置: Single
高度: 15.65 mm
长度: 10 mm
产品类型: MOSFET
工厂包装数量: 50
子类别: MOSFETs
晶体管类型: 1 N-Channel
宽度: 4.4 mm
零件号别名: IRF2807PBF SP001550978
单位重量: 2 g
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