产品属性
属性值
制造商:
IXYS
产品种类:
MOSFET
RoHS:
技术:
Si
安装风格:
Through Hole
封装 / 箱体:
TO-264-3
晶体管极性:
N-Channel
通道数量:
1 Channel
Vds-漏源极击穿电压:
1 kV
Id-连续漏极电流:
32 A
Rds On-漏源导通电阻:
320 mOhms
Vgs - 栅极-源极电压:
- 30 V, + 30 V
Vgs th-栅源极阈值电压:
6.5 V
Qg-栅极电荷:
225 nC
最小工作温度:
- 55 C
最大工作温度:
+ 150 C
Pd-功率耗散:
960 W
通道模式:
Enhancement
商标名:
HiPerFET
封装:
Tube
商标:
IXYS
配置:
Single
下降时间:
43 ns
正向跨导 - 最小值:
13 S
高度:
26.16 mm
长度:
19.96 mm
产品类型:
MOSFET
上升时间:
55 ns
系列:
IXFK32N100
工厂包装数量:
25
子类别:
MOSFETs
晶体管类型:
1 N-Channel
类型:
Polar Power MOSFET HiPerFET
典型关闭延迟时间:
76 ns
典型接通延迟时间:
50 ns
宽度:
5.13 mm
单位重量:
10 g
FP15R12KT3BPSA1
FP15R12YT3BOMA1
FB50R07W2E3B23BOMA1
FS25R12KT3BOSA1
DF225R12W2H3FB11BPSA1
FP15R12KE3GBPSA1
FS25R12KT3BPSA1
FS3L25R12W2H3B11BPSA1
FS25R12YT3BOMA1
FP25R12KT4B11BPSA1
BSM10GD120DN2E3224BOSA1
BSM10GD120DN2E3224BPSA1
FS25R12KE3GBPSA1
FS50R06YE3BOMA1
FP25R12KT4BPSA1
FS50R06KE3BPSA1
FP25R12KT4B15BPSA1
BSM15GD120DN2BOSA1
FP30R06KE3BPSA1
DF75R12W1H4FB11BOMA2
F3L225R07W2H3PB63BPSA1
BSM35GB120DN2HOSA1
FP25R12KT3BOSA1
BSM15GD120DN2E3224BOSA1
BSM15GD120DN2E3224BPSA1
BSM50GAL120DN2HOSA1
FS35R12KE3GBPSA1
BSM50GB120DLCHOSA1
DF200R12W1H3FB11BOMA1
FS50R12KT4B15BPSA1
FP50R07N2E4BPSA1
FS75R07N2E4BPSA1
FS50R12KT4B11BPSA1
FP50R07N2E4B11BPSA1
BSM50GB120DN2HOSA1
FP50R06KE3BPSA1
FS75R07N2E4B11BPSA1
FS75R06KE3BPSA1
BSM15GD120DLCE3224BOSA1
BSM15GD120DLCE3224BPSA1
DDB6U134N16RRBPSA1
FP35R12KT4B15BPSA1
FP25R12KT4B16BPSA1
FS50R12KT4PB11BPSA1
FP35R12KT4B11BPSA1
FF23MR12W1M1C11BPSA1
FS50R12KT3BPSA1
BSM75GAL120DN2HOSA1
BSM75GAR120DN2HOSA1
FP35R12KT4PBPSA1
FP40R12KE3BOSA1
FP75R07N2E4B16BOSA1
FP75R07N2E4BPSA1
F3L200R07W2S5FPB55BPSA1
F3L200R07W2S5FPB56BPSA1
FP25R12U1T4BPSA1
FP40R12KE3BPSA1
BSM75GB120DLCHOSA1
FP75R07N2E4B11BPSA1
FS75R07U1E4BPSA1
BSM100GAL120DLCKHOSA1
FS100R07N2E4BPSA1
BSM75GB120DN2HOSA1
FS100R07N2E4B11BPSA1
BSM10GP120BOSA1
BSM10GP120BPSA1
BSM15GP120BPSA1
FP15R12KS4CBOSA1
BSM25GD120DN2BOSA1
BSM25GD120DN2E3224BPSA1
DF160R12W2H3FB11BPSA1
FF150R12KE3GHOSA1
FF150R12KE3GB2HOSA1
FZ300R12KE3GHOSA1
FD300R06KE3HOSA1
