FGA50N60LS详细规格
- 类别:IGBT - 单路
- 描述:IGBT 600V 50A TO-3P
- 系列:-
- 制造商:Fairchild Semiconductor
- IGBT类型:-
- 电压_集电极发射极击穿(最大):600V
- VgewwwwIc时的最大Vce(开):1.8V @ 15V,50A
- 电流_集电极333Ic444(最大):100A
- 功率_最大:240W
- 输入类型:标准
- 安装类型:通孔
- 封装/外壳:TO-3P-3,SC-65-3
- 供应商设备封装:TO-3P
- 包装:管件
- 单二极管/整流器 Vishay General Semiconductor DO-204AL,DO-41,轴向 DIODE 1A 1600V STD SMC
- 矩形 Assmann WSW Components DIP CABLE - HDM20H/AE20G/X
- FET - 阵列 International Rectifier 6-TSOP(0.059",1.50mm 宽) MOSFET N/P-CH 20V 2.7A 6-TSOP
- FET - 阵列 International Rectifier 8-TSSOP,8-MSOP(0.118",3.00mm 宽) MOSFET P-CH DUAL 20V 4.3A MICRO8
- IGBT - 单路 Fairchild Semiconductor TO-3P-3,SC-65-3 IGBT 600V 60A TO-3PN
- 矩形 Assmann WSW Components DIP CABLE - HDM20H/AE20M/X
- FET - 单 Infineon Technologies TO-262-3,长引线,I²Pak,TO-262AA MOSFET N-CH 40V 120A TO262-3-1
- 单二极管/整流器 Vishay General Semiconductor DO-204AL,DO-41,轴向 DIODE 1A 1600V STD SMC
- 矩形 Assmann WSW Components DIP CABLE - HDM20H/AE20M/X
- FET - 单 International Rectifier 8-TSSOP,8-MSOP(0.118",3.00mm 宽) MOSFET P-CH 30V 3.6A MICRO8
- FET - 单 Infineon Technologies TO-262-3,长引线,I²Pak,TO-262AA MOSFET N-CH 60V 120A TO262-3
- 矩形 Assmann WSW Components DIP CABLE - HDM24H/AE24M/X
- 单二极管/整流器 Vishay General Semiconductor DO-204AL,DO-41,轴向 DIODE 1A 1600V STD SMC
- FET - 单 Vishay Siliconix TO-263-3,D²Pak(2 引线+接片),TO-263AB MOSFET N-CH 200V 3.3A D2PAK
- 矩形 Assmann WSW Components DIP CABLE - HDM24H/AE24G/X